Esarem Technologies Pvt. Ltd.


2N6116 (SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS)

It is designed to enable the engineer to "program" unijunction characteristics such as RBB,,Iv, and Ip by merely selecting two resistor Values. Application includes thyristor-triggor, oscillator, pulse and timing circuits. These Devices may also be used in Special Thyristor applications due to the availability of an anode gate.

 

  • Programmable - RBB,, Iv and Ip
  • Hermetic TO- 18 Package
  • Low On-State Voltage -1.5 Volts Maximum @ IF - 50 mA
  • Low Gate to Anode Leakage Current - 5.0nA Maximum
  • High Peak Output Voltage-16 Volts Typical
  • Low offset Voltage- 0.35 Volt Typical (RG=10k Ohms)


MAXIMUM RATINGS

Ratings

Symbol

Value

Unit

Repetitive Peak Forward Current
100 µs Pulse Width, 1.0% Duty Cycle
20 µs Pulse Width, 1.0% Duty Cycle

ITRM

1.0
2.0

Amp

Non-Repetive Peak Forward Current
100 µs Pulse width

ITSM

5.0

AMP

DC Forward Anode Current Derate
Above 25°C

IT

200
2.0

mA
mA/°c

DC Gate Current

Gate to Cathode Forward Voltage

IG

VGKE

± 20

40

mA

Volt

Gate to Cathode Reverse Voltage

VGKR

5.0

Volt

Gate to Anode Reverse Voltage

VGAR

40

Volt

Anode to Chathode Voltage

VAK

± 40

Volt

Forward Power Dissipation @
TA= 25° c Derate Above 25°c

PF1/0 JA

250
2.5

mW
mW/°c

Operating Junction Temperature Range

TJ

-55 to +125

°C

Storage Temperature Range

Tstg

-65 to +200

°C

ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)

Characteristic

Figure

Symbol

Min

Typ

Max

Unit

Offset Voltage
(Vs = 10Vdc, Rg=10k)

1

VT

0.2
0.2

0.70
0.35

1.6
0.6

Volts

Gate to Anode Leakage Current
(Vs= 40 Vdc, Ta = 25°c, Cathode Open)
( Vs= 40 Vdc, Ta = 45°c, Cathode Open)

-

IGAO

-
-

1.0
30

5.0
75

nAdc

Gate to Cathode Leakage Current
(vs= 40Vdc, anode to cathode shorted)

-

IGKS

-

5.0

50

nAdc

Peak Current (Vs= 10Vdc,RG= 10 k)

2.9-14

Ip

-

1.25
4.0

2.0
5.0

µA

Valley Current
(Vs= 10Vdc,RG= 1.0 k)
(Vs= 10Vdc,RG= 10 k)

1,4,5

Iv



70


18
270


50
-

 

Forward Voltage (If = 50 mA Peak)

1.6

Vf

-

0.8

1.5

Volts

Peak Output Voltage
(VB=20 vdc, cc=0.2µF)

3.7

Vo

6.0

16

-

Volts

Pulse Voltage Rise Time
(VB=20 vdc, Cc= 0.2µF)

3

tr

-

40

80

ns


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