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Esarem Technologies Pvt.
Ltd.
2N 5109
NPN SILICON HIGH-FREQUENCY TRANSISTOR
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Designed specifically for board band
applications requiring low cross-modulation distorsion and low-noise figure.
Characterized for use in CATV amplifiers.
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MAXIMUM RATINGS
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Rating |
Symbol |
Value |
Unit |
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Collector-emitter Voltage |
V cEo |
20 |
Vdc |
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Collector - Base Voltage |
UcBo |
40 |
Vdc |
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Emitter - Base Voltage |
UEBo |
3.0 |
Vdc |
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Base Current - Continuous |
IB |
400 |
mAdc |
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Collector Current - Continuous |
IC |
400 |
mAdc |
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Total device dissipation
Tc=75°C(1)
Derate above 25°C |
PD |
2.5
20 |
Watt
mW/°C |
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Storage temperature Range |
Tstg |
-65to - +200 |
°C |
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(1) Total Device Dissipation at T A =
25°C is 1.0 Watt
ELECTRONICAL
CHARACTERISTICS( T c=25°C unless otherwise noted )
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Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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* OFF CHARACTERISTICS |
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Collector-Emitter Sustaining Voltage
(Ic = 5.0
mAdc, IB = 0) |
V CEO
(sus) |
20 |
- |
- |
Vdc |
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Collector-Emitter Sustaining Voltage(1)
(Ic = 5.0
mAdc, RBF = 10 OHM) |
V CER
(sus) |
40 |
- |
- |
Vdc |
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Collector Cutoff Current
(V CF = 15 Vdc,
IB = 0) |
ICEO |
- |
- |
20 |
µAdc |
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Emitter Cutoff Current
(VBF = 3.0 V dc,
I C = 0)
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IEBO |
- |
- |
100 |
µAdc |
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*
ON CHARACTERISTICS
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DC Current Gain
(Ic = 360 mAdc, VCE =
5.0 Vdc)
(Ic = 50 mAdc, VCE = 15 Vdc) |
h FE |
5.0
40 |
-
- |
-
120 |
-
- |
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* DYNAMIC
CHARACTERISTICS
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* Current-Gain -
Bandwidth Product
(Ic = 50 mAdc, VCF = 15 Vdc, f = 200
MHz) |
f T |
1200 |
- |
- |
MHz |
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* Collector-Base
Capacitance
(Ic = 15 Vdc, IF = 0, f = 1.0 MHz) |
Ccb |
- |
1.8 |
3.5 |
pF |
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Noise Figure
(Ic = 10 mAdc, VCF = 15Vdc,
f = 200 MHz) |
NF |
- |
3.0 |
- |
dB |
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FUNCTIONAL
TEST
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* Common - Emitter
Amplifier Voltage Gain
(Ic = 50mAdc, Vcc = 15Vdc, f = 50 to 216
MHz) |
Gve |
11 |
- |
- |
dB |
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* Indicates JEDEC Registred
Data
(1) Pulsed thru a 25 mH Inductor ; 50%
Duty Cycle
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Printed from
www.esarem.com |