Esarem Technologies Pvt. Ltd.

2N2647 (SILICON UNIJUNCTION TRANSISTOR)

The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current ( trigger current) are required ( i.e. long timing applications), and also for triggering high power SCR's.

ABSOLUTE MAXIMUM RATINGS : 25°C (unless otherwise specified)

Power dissipation ( Note 1)

300mW

RMS Emitter Current

50 mA

Peak Emitter Current(Note 2)

2 A

Emitter Reverse Voltage

30 V

Interbase Voltage

35V

Operating Temperature Range

-65°C to + 125°C

Storage Temperature Range

-65°C to +150°C

ELECTRICAL CHRACTERISTICS : 25°C (unless otherwise specified)

PARAMETER

 

Min

Typ

Max

 

Intrinsic standoff Ratio (VBB=10v)

0.68

0.75

0.82

 

Interbase Resistance
(VBB=3v, IE=0)

RBBO

4.7

7

9.1

K

Emitter saturation Voltage
(VBB=10v, IE=50mA)

VE(sat)

-

2

-

V

Modulated Interbase Current
(VBB=10V,IE=50mA)

1B2(MOD)

-

12

-

mA

Emitter Reverse Current
(VB2E=30v,IB1=0)

IEO

-

0.01

0.2

µA

Peak Point Emitter Current
(VBB=25v)

Ip

-

0.4

2

µA

Valley Point Current
(VBB=20v, RB2=100)

Iv

6

11

18

mA

Base-one peak pulse voltage SCR Firing conditions

VOB1

6.0

7.5

-

V

Note:


1. Derete 3.0 MW/°c increase in ambient temperature.
The total power dissipation (available power to Emitter and Base- Two) must be limited by the external Circuitry.

Capacitor Discharge- 10µFd or less, 30 volts or less

3. The intrinsic standoff ration is essentially constant with temperature and interbase voltage.

is defined by the equation :

Vp= VBB + Vd


where


Vp = Peak emitter voltage
VBB= Interbase Voltage
VD = Juction Diode Drop (Approx 5v)

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