Esarem Technologies Pvt. Ltd.

2N2646 (SILICON UNIJUNCTION TRANSISTOR)

The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary importance and is ideal for use in firing circuits for silicon controlled Rectifiers and other applications where a guaranteed minimum pulse amplitude is required.

ABSOLUTE MAXIMUM RATINGS : 25°C (unless otherwise specified)

Power dissipation ( Note 1)

300mW

RMS Emitter Current

50 Ma

Peak Emitter Current(Note 2)

2 A

Emitter Reverse Voltage

30 V

Interbase Voltage

35V

Operating Temperature Range

-65°C to + 125°C

Storage Temperature Range

-65°C to +150°C

ELECTRICAL CHRACTERISTICS : 25°C (unless otherwise specified)

PARAMETER

 

Min

Typ

Max

 

Intrinsic standoff Ratio (vBB=10v)

0.56

0.65

0.75

 

Interbase Resistance
(VBB=3v, IE=0)

RBBO

4.7

7

9.1

K

Emitter saturation Voltage
(VBB=10v, IE=50mA)

VE(sat)

-

2

-

V

Modulated Interbase Current
(VBB=10V,IE=50mA)

IB2(MOD)

-

12

-

mA

Emitter Reverse Current
(VB2E=30v,IB1=0)

IEO

-

0.05

12

µA

Peak Point Emitter Current
(VBB=25v)

Ip

-

0.4

5

µA

Valley Point Current
(VBB=20v, RB2=100)

Iv

4

6

-

mA

Base-one peak pulse voltage SCR Firing conditions

VOB1

3.0

6.5

-

V

Note:


1. Derete 3.0 MW/°c increase in ambient temperature.
The total power dissipation (available power to Emitter and Base- Two) must be limited by the external Circuitry.

2. Capacitor Discharge- 10µFd or less, 30 volts or less

3. The intrinsic standoff ration is essentially constant with temperature and interbase voltage.

is defined by the equation :

Vp= VBB + Vd


where


Vp = Peak emitter voltage
VBB= Interbase Voltage
VD = Juction Diode Drop (Approx 5v)

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