2N5161

PNP silicon RF power transistors designed for amplifier or oscillator applicatator applications in military and industrial equipment. Suitable for use as Class B or C output or power oscillator in VHF applications.

TO-60

Case common to emitter

Rating

Symbol

Velue

Unit

Collector - Emitter Voltage

V_CEo

40

Vdc

Collector - Base Voltage

U_CB

60

V_DC

Emitter - Base Voltage

U_EB

4

V_DC

Total Device Dissipation at
T_C=75°C
Derate above 25°C

P_D

20
0.114

Watt
W / °C

Operating and Storage
Junction Temperature Range

T_I, T _stg

-65 to +200

°C

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CARACTERISTICS

Collector - Emitter Sustaining Voltage*
(I_C=200mAdc, I_B=0)

BV_CEO(sus)*

40

-

-

Vdc

Emitter - Base Breackdown Voltage
(I_E=1.0mAdc, I_C=0)

V_EBO

4.0

-

-

Vdc

Collector Cutoff Current
(V_CE=60Vdc, V_BE=0)
(V_CE=28 Vdc, V_BE=0, T_C=200°C)

I_CES

-

-

0.5
5.0

mAdc

Collector Cutoff Current
(V_CB=28 Vdc, I_E=0)

I_CBO

-

-

0.1

mAdc

ON CARACTERISTICS

DC Current Gain
(I_C=250mAdc, V_CF=5.0 Vdc)

h_FE

10

-

-

-

DYNAMIC CARACTERISTICS

Current - Gain - Bandwidth product
I_C=200mAdc, V_CE=20Vdc, f=100MHz)

f_T

-

500

-

MHz

Collector-Base Capacitance
(V_CB=28 Vde, I_IE=0, f=0.1 to 1.0 MHz)

C_cb

-

10

15

pF

FUNCTIONAL TEST

Power Output
(V_CC=28Vdc, P_in=1.0Watt, f=175MHz)

P_out

7

-

-

Watts

Collector Efficiency
(V_CC=28Vdc, p_out=7.5Watts, f=175MHz)

45

-

-

%