May 14, 2008

2N5109 (NPN SILICON HIGH-FREQUENCY TRANSISTOR)


TO - 39

...designed specifically for board band applications requiring low cross-modulation distorsion and low-noise figure. Characterized for use in CATV amplifiers.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-emitter Voltage

V CEo

20

V dc

Collector - Base Voltage

UCBo

40

V dc

Emitter - Base Voltage

UEBo

3.0

V dc

Base Current - Continuous

IB

400

mA dc

Collector Current - Continuous

IC

400

mA dc

Total device dissipation

Tc=75°C(1)

Derate above 25°C

PD

2.5

20

Watt

mW/°C

Storage temperature Range

Tstg

-65 to - +200

°C

(1) Total Device Dissipation at TA = 25°C is 1.0 Watt

ELECTRICAL CHARACTERISTICS( Tc=25°C unless otherwise noted )

Characteristic

Symbol

Min

Typ

Max

Unit

* OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage
(Ic = 5.0 mAdc, IB = 0)

V CEO
(sus)

20

-

-

Vdc

Collector-Emitter Sustaining Voltage(1)
(Ic = 5.0 mAdc, RBF = 10)

V CER
(sus)

40

-

-

Vdc

Collector Cutoff Current
(V CE = 15 Vdc, IB = 0)

ICEO

-

-

20

µAdc

Emitter Cutoff Current
(VBE = 3.0 V dc, I C = 0)

IEBO

-

-

100

µAdc

* ON CHARACTERISTICS

DC Current Gain
(Ic = 360 mAdc, VCE = 5.0 Vdc)
(Ic = 50 mAdc, VCE = 15 Vdc)

hFE

5.0
40

-
-

-
120

-
-

* DYNAMIC CHARACTERISTICS

* Current-Gain - Bandwidth Product
(Ic = 50 mAdc, VCF = 15 Vdc, f = 200 MHz)

f T

1200

-

-

MHz

* Collector-Base Capacitance
(Ic = 15 Vdc, IF = 0, f = 1.0 MHz)

Ccb

-

1.8

3.5

pF

Noise Figure
(Ic = 10 mAdc, VCF = 15Vdc, f = 200 MHz)

NF

-

3.0

-

dB

FUNCTIONAL TEST

* Common - Emitter Amplifier Voltage Gain
(Ic = 50mAdc, Vcc = 15Vdc, f = 50 to 216 MHz)

Gve

11

-

-

dB

* Indicates JEDEC Registred Data
(1) Pulsed thru a 25 mH Inductor ; 50% Duty Cycle

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