2N2647
(SILICON UNIJUNCTION TRANSISTOR)
The 2N2647 is intended for applications where a
low emitter leakage current and a low peak point emitter current ( trigger
current) are required ( i.e. long timing applications), and also for triggering
high power SCR's.
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ABSOLUTE MAXIMUM RATINGS
: 25°C (unless otherwise specified) |
|
Power dissipation ( Note 1) |
300mW |
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RMS Emitter Current |
50 mA |
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Peak Emitter Current(Note 2) |
2 A |
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Emitter Reverse Voltage |
30 V |
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Interbase Voltage |
35V |
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Operating Temperature Range |
-65°C to + 125°C |
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Storage Temperature Range |
-65°C to +150°C |
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ELECTRICAL CHRACTERISTICS
: 25°C (unless otherwise specified)
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PARAMETER |
|
Min |
Typ |
Max |
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Intrinsic standoff Ratio
(VBB=10v) |
|
0.68 |
0.75 |
0.82 |
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Interbase Resistance
(VBB=3v,
IE=0) |
RBBO |
4.7 |
7 |
9.1 |
K |
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Emitter saturation
Voltage
(VBB=10v, IE=50mA) |
VE(sat) |
- |
2 |
- |
V |
|
Modulated Interbase
Current
(VBB=10V,IE=50mA) |
1B2(MOD) |
- |
12 |
- |
mA |
|
Emitter Reverse
Current
(VB2E=30v,IB1=0) |
IEO |
- |
0.01 |
0.2 |
µA |
|
Peak Point Emitter
Current
(VBB=25v) |
Ip |
- |
0.4 |
2 |
µA |
|
Valley Point Current
(VBB=20v,
RB2=100) |
Iv |
6 |
11 |
18 |
mA |
|
Base-one peak pulse voltage SCR Firing
conditions |
VOB1 |
6.0 |
7.5 |
- |
V |
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Note:
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1. Derete 3.0 MW/°c increase in ambient
temperature.
The total power dissipation (available power to Emitter and
Base- Two) must be limited by the external Circuitry.
Capacitor Discharge- 10µFd or less, 30 volts
or less
3. The intrinsic standoff ration
is
essentially constant with temperature and interbase voltage.
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is defined by the equation : |
Vp= VBB + Vd |
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where
|
Vp = Peak emitter voltage
VBB=
Interbase Voltage
VD = Juction Diode Drop (Approx 5v)
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May 09, 2008
