May 14, 2008

2N2646A (SILICON UNIJUNCTION TRANSISTOR)

2N 2646A is a Silicon Unijunction Transistor in a TO-39 metal envelope and due to its new structure design, its resulting in lower saturation voltage, peak point current and valley current as well as a much higher base-one peak pulse voltage. In addition these devices are much faster switches.

The 2N 2646A is intended for general-purpose industrial applications where circuit economy is of primary importance and due to its good triggering properties is ideal for use in firing circuits for power Silicon Controlled Rectifiers (SCR'S).

ABSOLUTE MAXIMUM RATINGS (TA=250C, unless otherwise specified)

Power Dissipation (Note 1)

700 Mw

RMS Emitter Current

50 mA

Peak Emitter Current(Note 2)

2 A

Emitter Reverse Voltage

30 V

Interbase Voltage

35V

Operating Temperature Range

-65°C to + 125°C

Storage Temperature Range

-65°C to +150°C

ELECTRICAL CHARACTERISTICS (TA=250C, unless otherwise specified)

PARAMETER

 

Min

Typ

Max

U/M

Intrinsic Standoff Ratio (VBB=10V) (Note 3)

0.56

0.65

0.75

-

Interbase Resistance
(VBB=3v, IE=0)

RBB

4.7

7

9.1

K

Emitter saturation Voltage
(VBB=10v, IE=50mA)

VE(sat)

-

1.6

-

V

Modulated Interbase Current
(VBB=10V,IE=50mA)

IB2(MOD)

-

12

-

mA

Emitter Reverse Current
(VB2E=30v,IB=0)

IEO

-

0.05

12

µA

Peak Point Emitter Current
(VBB=25v)

Ip

-

0.4

5

µA

Valley Point Current
(VBB=20v, RB2=100)

Iv

4

6

-

mA

Base-one peak pulse voltage SCR Firing conditions

VOB1

3.0

6.5

-

V

Note:


1. Derate 7 mW/0C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-Two) must be limited by the external circuitry.

2. Capacitor discharge - 10mF or less, 30 volts or less.

3. The intrinsic standoff ration is essentially constant with temperature and interbase voltage.

is defined by the equation :

VP= VBB + Vd


where


Vp = Peak emitter voltage
VBB= Interbase Voltage
VD = Juction Diode Drop (Approx 5v)

Back to Data Sheet

print version
.
. . . . .