2N2646
(SILICON UNIJUNCTION TRANSISTOR)
The 2N2646 is intended for general purpose
industrial applications where circuit economy is of primary importance and is
ideal for use in firing circuits for silicon controlled Rectifiers and other
applications where a guaranteed minimum pulse amplitude is
required.
|
|
ABSOLUTE MAXIMUM
RATINGS : 25°C (unless otherwise specified) |
|
Power dissipation ( Note 1) |
300mW |
|
|
RMS Emitter Current |
50 Ma |
|
Peak Emitter Current(Note 2) |
2 A |
|
Emitter Reverse Voltage |
30 V |
|
Interbase Voltage |
35V |
|
Operating Temperature Range |
-65°C to + 125°C |
|
Storage Temperature Range |
-65°C to +150°C |
|
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ELECTRICAL
CHRACTERISTICS : 25°C (unless otherwise
specified)
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PARAMETER |
|
Min |
Typ |
Max |
|
|
Intrinsic standoff Ratio
(vBB=10v) |
|
0.56 |
0.65 |
0.75 |
|
|
Interbase
Resistance
(VBB=3v, IE=0) |
RBBO |
4.7 |
7 |
9.1 |
K |
|
Emitter saturation
Voltage
(VBB=10v, IE=50mA) |
VE(sat) |
- |
2 |
- |
V |
|
Modulated Interbase
Current
(VBB=10V,IE=50mA) |
IB2(MOD) |
- |
12 |
- |
mA |
|
Emitter Reverse
Current
(VB2E=30v,IB1=0) |
IEO |
- |
0.05 |
12 |
µA |
|
Peak Point Emitter
Current
(VBB=25v) |
Ip |
- |
0.4 |
5 |
µA |
|
Valley Point
Current
(VBB=20v, RB2=100) |
Iv |
4 |
6 |
- |
mA |
|
Base-one peak pulse voltage SCR Firing
conditions |
VOB1 |
3.0 |
6.5 |
- |
V |
|
|
Note:
|
1. Derete 3.0 MW/°c increase in ambient
temperature.
The total power dissipation (available power to Emitter and
Base- Two) must be limited by the external Circuitry.
2. Capacitor Discharge- 10µFd or less,
30 volts or less
3. The intrinsic standoff ration
is
essentially constant with temperature and interbase voltage.
|
|
is defined by the equation : |
Vp= VBB +
Vd |
|
where
|
Vp = Peak emitter
voltage
VBB= Interbase Voltage
VD = Juction Diode
Drop (Approx 5v)
|
|
July 03, 2008
